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GJ20N03 10E15 20120 SF3G48 AN5043SC 6642CU LI31040 HCT244
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 IGBT MODULE
CIRCUIT
Chopper 50A 600V
OUTLINE DRAWING
PRHMB50A6
2- fasten- tab No 110
Dimension(mm)
Approximate Weight : 220g
MAXMUM RATINGS (Tc=25C) Item
Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms
Symbol
VCES VGES IC ICP PC Tj Tstg VISO FTOR
PRHMB50A6
600 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 2
Unit
V V A W C C V N*m
Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals
ELECTRICAL CHARACTERISTICS (Tc=25C) Characteristic
Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time
Symbol
ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff
Test Condition
VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 6 ohm RG= 15.1 ohm VGE= +/- 15V
Min.
4.0 -
Typ.
2.0 5000 0.15 0.25 0.2 0.45
Max.
1.0 1.0 2.5 8.0 0.3 0.4 0.35 0.7
Unit mA A V V pF s
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25C) Item Symbol Rated Value
Forward Current DC 1 ms IF IFM 50 100
Unit A Typ.
1.9 0.15
Characteristic
Peak Forward Voltage Reverse Recovery Time
Symbol
VF trr
Test Condition
IF=50A,VGE=0V IF=50A,VGE=-10V,di/dt=50A/s
Min.
-
Max.
2.4 0.25
Unit V s Unit C/W
THERMAL CHARACTERISTICS Characteristic
Thermal Impedance IGBT DIODE
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min.
-
Typ.
-
Max.
0.5 1.0
PRHMB50A6
Fig.1- Output Characteristics (Typical)
100
TC=25 VGE=20V 12V 15V
16
Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
TC=25 IC=20A 100A
Collector to Emitter Voltage V CE (V)
14
80
10V
50A
12 10 8 6 4 2 0
Collector Current I C (A)
60
9V
40
20
8V 7V
0 0 2 4 6 8 10
0
4
8
12
16
20
Collector to Emitter Voltage VCE (V)
Gate to Emitter Voltage VGE (V)
Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical)
16
Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical)
400 350 16
TC=125 IC=20A 100A
Collector to Emitter Voltage V CE (V)
14
RL=5 TC=25
14
Collector to Emitter Voltage V CE (V)
50A
12 10 8 6 4 2 0
Gate to Emitter Voltage VGE (V)
300 250 200
12 10 8
VCE=300V
150 6
200V
100 50 0
100V
4 2 0
0
4
8
12
16
20
0
50
100
150
200
Gate to Emitter Voltage VGE (V)
Total Gate Charge Qg (nC)
Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical)
20000 10000 5000 1
Fig.6- Collector Current vs. Switching Time (Typical)
0.9 0.8
Cies Coes Cres
VGE=0V f=1MHZ TC=25
VCC=300V RG=15 VGE=15V TC=25
Switching Time t (s)
Capacitance C (pF)
2000 1000 500 200 100 50 20
0.7 0.6 0.5 0.4 0.3 0.2 0.1
toff
ton tf tr
0 20 40 60 80 100
0.2
0.5
1
2
5
10
20
50
100
200
0
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
PRHMB50A6
Fig.7- Series Gate Impedance vs. Switching Time (Typical)
5
100
Fig.8- Forward Characteristics of Free Wheeling Diode
(Typical)
TC=25
90 80
2
VCC=300V IC=50A VG=15V TC=25
TC=125
Switching Time t (s)
Forward Current I F (A)
toff ton tr
70 60 50 40 30 20
1
0.5
tf
0.2
0.1
10
0.05
2
5
10
20
50
100
200
500
0
0
1
2
3
4
Series Gate Impedance RG ()
Forward Voltage VF (V)
Fig.9- Reverse Recovery Characteristics (Typical)
500
Fig.10- Reverse Bias Safe Operating Area (Typical)
500 200 100
Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns)
IF=50A TC=25 trr
200 100 50
RG=15 VGE=15V TC125
Collector Current I C (A)
IRrM
0 100 200 300 400
50 20 10 5 2 1 0.5 0.2 0.1
20 10 5
2
0.05
0
200
400
600
800
-di/dt (A/s)
Collector to Emitter Voltage V CE (V)
Fig.11- Transient Thermal Impedance
2
(/W)
1
FRD
5x10
-1
(J-C)
IGBT
2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3
Transient Thermal Impedance Rth
TC=25
2x10 -3 1x10 -3 -5 10 10 -4 10 -3 10 -2 10 -1
1 Shot Pulse
1 10 1
Time t (s)


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